oxidation

TYSTAR TYTAN 4600

Four distinct tubes

Up to 1100 degrees C operation

Up to 25 wafes or samples

Wafers of either 150mm or 100mm in diameter

Small pieces have dedicated quatzware

Tube 1: CMOS Oxide, Online Oxidation Calulator 

Tube 2: General Oxide, Online Oxidation Calculator

Tube 3: Diffusion

Tube 4: Anneal

Solaris RTP 1

Up to  to 4" in diameter substrate capability

Max temperature: 1100 °C

Gases available: N2, O2

IES RTP

ONLY for samples that are CMOS compatible

Up to 200 mm in diameter capability

Gases available: Nitrogen, Oxygen, 5%H2/N2

Temperature limit 1200 degree C for 3 minutes

EQ-DZF-6050-HT/500

Up to 500 degree C baking

Under Vacuum of 2e-2 mBar, or Nitrogen  or air for sustained periods

Oven 2