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Electron beam lithography
Elionix 100 kV
- Sample sizes range from 3X3 mm up to full 6" wafers.
- Linewidth resolution: 6nm
laser direct-write lithography
Microtech LW405D
Wavelength: 405 nm
Write field (mm): 150x150 (6”x6”)
Substrate size (mm): from 5x5 to 50 mm beyond the write field
Substrate thickness: 0 to 10 mm
Minimum feature size: 0.5um
4 selectable final lenses
laser direct-write lithography
Heidelberg DWL66
Write head 2 mm 10 mm
Smallest feature (nm) 400-600 950-1000
Speed 5mm2/sec 20x faster than 2mm write head
- laser wavelength 375nm, 70mW.
- Four cameras- micro and macro cameras on the front and back of sample.
- Back-side alignment sample holder for 4" sample.
- filtered flow box contains internal heating system- temperature stable at +/-0.1deg C. T set at 22.7deg C (doors closed).
- air levelled granite table (against vibrations)
- positioning interferometer accuracy: 10 nm
Electron beam lithography
Raith 150
- Sample sizes range from 3X3 mm up to full 4" wafers.
- Linewidth resolution: 20nm
Mask aligner
SUSS MJB4
Substrate sizes up to 100mm (4 in)
Substrate thickness from 100um to 6mm
Exposure sources:
- i-line (365 nm): 7000 mW, Intensity: 22.31 mW/cm2
- h-line (405 nm): 4300 mW, Intensity: 54.19 mW/cm2
- g-line (435 nm): 4300 mW, Intensity: NA (out of detector range)
Mask aligner
Quintel mask aligner
- 6" capability
- resolution 1 um minimum feature
- Infra red back side alignment.
- Soft and vacuum contact modes.
- UV300 optics for 365 nm sensitive photoresists.
MASK ALIGNER
MJB 3 Kall Suss
- resolution 1 um minimum feature
- Masks from 2" to 4" square, 0.06" thick.
- Soft and hard contact modes.
- UV 300 optics for 365 nm photoresists.